| PART |
Description |
Maker |
| RTC-63423 RTC-63421 RTC-63421M |
4-bit MULTIFUNCTIONAL REAL TIME CLOCK MODULE
|
Electronic Theatre Controls, Inc.
|
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| BGA425 Q62702-G0058 Q62702-S497 Q62702-S633 Q62702 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable)
SI-MMIC-AMPLIFIER IN SIEGET 25-TECHNOLOGIE (MULTIFUNCTIONAL CASC. 50 ヘ BLOCK LNA / MIX UNCONDITIONALLY STABLE)
From old datasheet system
Si-MMIC-Amplifier in SIEGET 25-Technologie
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) SIPMOS小信号晶体管P通道增强模式的逻辑电平
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MCM7643 MCM7643A MCM7643ADC MCM7643APC MCM7643DC M |
V(cc): 7.0V; 650mA; 4096-bit programmable read only memory
4096 BIT PROGRAMMABLE READ ONLY MEMORIES
|
Motorola, Inc
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
|
Advanced Micro Devices, Inc.
|
| AM29DL640D35WHFN AM29DL640D90EF D640D90VI AM29DL64 |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
AMD[Advanced Micro Devices]
|
| UPD42S18165L UPD42S18165LLE-A70 UPD42S18165LG5-A50 |
3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
|
NEC
|
| AM29PDL128G80PEI AM29PDL128G70RPEF AM29PDL128G70RP |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
|
AMD[Advanced Micro Devices]
|
| AM29PDL128G80 AM29PDL128G90 AM29PDL128G70R |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
|
Advanced Micro Devices
|
| MM912IP812AMAF PM912NE812AMAF MM912JP812AMAF MM912 |
S12P MCU and Multifunctional Ignition
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
